Demonstration of In0.9Ga0.1As/GaAs0.18Sb0.82 Near Broken-gap Tunnel FET with ION=740μA/μm, GM=700μS/μm and Gigahertz Switching Performance at VDS=0.5V
نویسندگان
چکیده
GM=700μS/μm and Gigahertz Switching Performance at VDS=0.5V R. Bijesh, H. Liu, H. Madan, D. Mohata, W. Li, N. V. Nguyen, D. Gundlach , C.A. Richter, J. Maier, K. Wang, T. Clarke, J. M. Fastenau, D. Loubychev, W. K. Liu, V. Narayanan and S. Datta The Pennsylvania State University, University Park, PA 16802; National Institute of Standards and Technology, MD; IQE Inc., Bethlehem, PA; Tel:(814) 954-2391, Email: [email protected]
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